Impurity free vacancy disordering of InGaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1803948
Reference16 articles.
1. Optoelectronic Properties of Semiconductors and Superlattices;Li E. H.,2000
2. Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells
3. Influence of Low-Temperature Chemical Vapor Deposited SiO[sub 2] Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
4. Quality of silica capping layer and its influence on quantum-well intermixing
5. Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide
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1. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures;Nanomaterials;2023-07-23
2. Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons;Nanomaterials;2023-01-11
3. Wide-gap photoluminescence control of quantum dots through atomic interdiffusion and bandgap renormalization;Nanophotonics;2020-10-29
4. Regional Bandgap Tailoring of 1550 nm‐Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth;physica status solidi (a);2019-11-27
5. Effects of RTA on Quaternary Capped QDIP Characteristics;Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors;2017-09-07
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