Photoluminescence upconversion in GaInNP∕GaAs heterostructures grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2188087
Reference15 articles.
1. High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
2. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures
3. High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces
4. Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
5. Dynamics of anti-Stokes photoluminescence in type-IIAlxGa1−xAs−GaInP2heterostructures: The important role of long-lived carriers near the interface
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1. Photon upconversion promoted by defects in low-dimensional semiconductor nanostructures;Defects in Advanced Electronic Materials and Novel Low Dimensional Structures;2018
2. Optical characteristics of GaAsSb alloy after rapid thermal annealing;Semiconductor Science and Technology;2017-10-13
3. Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism;Physical Review B;2016-06-09
4. Anti-Stokes luminescence in the light of second order perturbation theory;Applied Physics Letters;2014-11-10
5. Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting;Small;2014-07
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