Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819129
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1. GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
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3. Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes
4. Efficiency droop in light-emitting diodes: Challenges and countermeasures
5. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
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1. Carrier density dependent Auger recombination in c-plane (In,Ga)N/GaN quantum wells: insights from atomistic calculations;Journal of Physics D: Applied Physics;2023-12-22
2. Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure;Indian Journal of Physics;2023-09-11
3. Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode;Journal of Nanophotonics;2023-05-23
4. Electronic band structure pseudopotential calculation of InGaN/GaN quantum wells;Optical and Quantum Electronics;2022-11-13
5. Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination;Physical Review B;2022-05-12
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