X‐rayin situobservation of relaxation and diffusion processes in Si1−xGexlayers on silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357633
Reference17 articles.
1. An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy
2. X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates
3. Effect of thermal annealing on the Raman spectrum of Si1−xGexgrown on Si
4. Rapid isothermal processing of strained GeSi layers
5. Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures
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2. High-quality strain-relaxed Si0.72Ge0.28 layers grown by MBE-UHV/CVD combined deposition chamber;Journal of Alloys and Compounds;2018-02
3. Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate;Journal of Crystal Growth;2013-07
4. Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap;Journal of Applied Physics;2012-09
5. Self-diffusion and dopant diffusion in germanium (Ge) and silicon–germanium (SiGe) alloys;Silicon–Germanium (SiGe) Nanostructures;2011
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