Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates-Reference-Cited by-同舟云学术

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Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates

Published:2015-08-21 Issue:7 Volume:118 Page:075701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jung A.¹,Taboada A. G.¹,Stumpf W.¹,Kreiliger T.¹^ORCID,Isa F.¹²,Isella G.²,Barthazy Meier E.³,von Känel H.¹

Affiliation:

1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland

2. L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como, Italy

3. Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich, Switzerland

Funder

ETH

Swiss National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928609

Reference22 articles.

1. GaAs epitaxy on Si substrates: modern status of research and engineering

2. Strain relaxation of GaAs/Ge crystals on patterned Si substrates

3. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence mechanism of InGaAs self-fit well-cluster composite structure with super-wide spectra;Journal of Luminescence;2023-01

2. InGaAs自适应阱簇复合结构的偏振双峰辐射机制及能带特征;Acta Optica Sinica;2023

3. Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy;Journal of Crystal Growth;2019-04

4. Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure;Chinese Optics Letters;2018

5. Site-Controlled Natural GaAs(111) Quantum Dots Fabricated on Vertical GaAs/Ge Microcrystals on Deeply Patterned Si(001) Substrates;Nanoscience and Nanotechnology Letters;2017-07-01

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