Electron energy loss studies of dislocations in GaN thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1542690
Reference24 articles.
1. Structures, Energetics and Electronic Properties of Complex III—V Semiconductor Systems
2. Probing the local dielectric/optical properties of group III-Nitrides by spatially resolved EELS on the nanometer scale
3. Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
4. The role of threading dislocations in the physical properties of GaN and its alloys
5. Indium segregation in InGaN quantum-well structures
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors;Microscopy of Semiconducting Materials 2003;2018-01-10
2. Rehybridization-induced defect-level of open-core edge dislocation in GaN;Scripta Materialia;2013-10
3. Optical properties of edge dislocations on (11¯00) prismatic planes in wurtzite ZnO introduced at elevated temperatures;Journal of Applied Physics;2012-06
4. Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures;physica status solidi (b);2011-04-07
5. A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method;Journal of Applied Physics;2010-12-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3