Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces-Reference-Cited by-同舟云学术

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Author:

Ando Yuto¹^ORCID,Nagamatsu Kentaro²,Deki Manato³,Taoka Noriyuki¹,Tanaka Atsushi³⁴,Nitta Shugo³^ORCID,Honda Yoshio³,Nakamura Tohru³⁵,Amano Hiroshi³⁴⁶⁷

Affiliation:

1. Department of Electronics, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan

2. Institute of Post-LED Photonics, Tokushima University, 2-1, Minami-Josanjima, 770-8506 Tokushima, Japan

3. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa-ku, 464-8601 Nagoya, Japan

4. National Institute for Materials Science, 1-1, Namiki, 305-0044 Tsukuba, Japan

5. Research Center for Micro-Nano Technology, Hosei University, 3-11-15, Midorimachi, 184-0003 Koganei, Japan

6. Akasaki Research Center, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan

7. Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference31 articles.

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