Breakdown characteristics in InP/InGaAs avalanche photodiode withp-i-nmultiplication layer structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364225
Reference22 articles.
1. High sensitivity of VPE-grown InGaAs/InP-heterostructure APD with buffer layer and guard-ring structure
2. High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes
3. High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
4. Planar InP/InGaAsP three-dimensional graded-junction avalanche photodiode
5. InGaAsP/InAlAs superlattice avalanche photodiode
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4. Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization;IEEE Photonics Journal;2022-04
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