Reactively sputtered Ti-Si-N films I. Physical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364133
Reference14 articles.
1. Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations
2. Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations
3. Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations
4. Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations
5. Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs
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