Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control-Reference-Cited by-同舟云学术

Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

Published:2016-08-29 Issue:9 Volume:109 Page:092105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Johns Paul M.¹^ORCID,Baciak James E.¹,Nino Juan C.¹

Affiliation:

1. Nuclear Engineering Program, Department of Materials Science and Engineering, University of Florida, 100 Rhines Hall, Gainesville, Florida 32611, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4962293

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2. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

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4. Band gap and structure of single crystal BiI3: Resolving discrepancies in literature

5. Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectors

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