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Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectors

  • Published:2011-10 Issue:1 Volume:652 Page:166-169
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lintereur Azaree T.,Qiu Wei,Nino Juan C.,Baciak James

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Semiconductors for Room Temperature Nuclear Detector Applications;Schlesinger,1995

2. Room-temperature compound semiconductor radiation detectors

3. Phase diagrams and structures of HgX2 (X = I, Br, Cl, F)

4. Bismuth tri-iodide crystal for nuclear radiation detectors

5. A. Lintereur, W. Qiu, J. Nino J. Baciak, in: Proceedings of the SPIE, San Diego, California, August 3–6, 7449, 7449-1M, 2009.

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