Density-dependent energy relaxation of hot electrons in InN epilayers-Reference-Cited by-同舟云学术

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Density-dependent energy relaxation of hot electrons in InN epilayers

Published:2009-01 Issue:1 Volume:105 Page:013526
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yang M. D.,Liu Y. W.,Shen J. L.,Chen C. W.,Chi G. C.,Lin T. Y.,Chou W. C.,Lo M. H.,Kuo H. C.,Lu T. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3056383

Reference19 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. InN, latest development and a review of the band-gap controversy

3. Optical properties of InN—the bandgap question

4. Relaxation process of photoexcited carriers in GaAs structures with low-temperature-grown layers

5. Electron-Hole Pair Relaxation Dynamics in Binary Copper-Based Semiconductor Quantum Dots

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power Loss Mechanisms in Indium-Rich InGaN Samples;Journal of Electronic Materials;2015-12-09

2. Carrier dynamics and related electronic band properties of InN films;Japanese Journal of Applied Physics;2014-09-26

3. Ultrafast spectroscopy of hot electron and hole dynamics in GaP;SPIE Proceedings;2013-09-28

4. Transient mobility and photoconductive terahertz emission with GaP;SPIE Proceedings;2013-09-24

5. Ultrafast charge-carrier and phonon dynamics in GaP;Applied Physics Letters;2013-08-12

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