Modulation of the optical absorption edge of ε- and κ - Ga2O3 due to Co impurities caused by band structure changes: Work function measurements and first-principle calculations
Author:
Affiliation:
1. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
2. Faculty of Engineering/Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5134521
Reference23 articles.
1. Sub-band-gap absorption in Ga2O3
2. The electronic structure of ε-Ga2O3
3. Chemical synthesis and band gap control of Ga2O3:Co nanocrystals
4. Photocatalytic performance of α-, β-, and γ-Ga2O3 for the destruction of volatile aromatic pollutants in air
5. Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy
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3. Electronic properties, optical properties and diffusion behavior of WO3 with H+, Li+ and Na+ intercalated ions: A first-principles study;Journal of Solid State Chemistry;2021-05
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