Perpendicular magnetic anisotropy induced by a cap layer in ultrathin MgO/CoFeB/Nb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4742195
Reference23 articles.
1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
3. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
4. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
5. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
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1. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers;Scientific Reports;2023-03-01
2. Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices;Advanced Electronic Materials;2019-06-05
3. The Correlation Between Magnetic Dead Layer and Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Top Structure;IEEE Transactions on Magnetics;2019-02
4. High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory;Scientific Reports;2018-09-26
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