Author:
Zhou Bowei,Khanal Pravin,Benally Onri Jay,Lyu Deyuan,Gopman Daniel B.,Enriquez Arthur,Habiboglu Ali,Warrilow Kennedy,Wang Jian-Ping,Wang Wei-Gang
Abstract
AbstractNb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m2 was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3 $$\times \;10^{5}$$
×
10
5
A/cm2.
Funder
Semiconductor Research Corporation
Defense Advanced Research Projects Agency
National Science Foundation
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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