Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi2Se3 and the trivial insulator SnSe2-Reference-Cited by-同舟云学术

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Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi2Se3 and the trivial insulator SnSe2

Published:2016-07-11 Issue:2 Volume:109 Page:021606
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matetskiy A. V.¹²^ORCID,Kibirev I. A.¹²^ORCID,Zotov A. V.¹²³,Saranin A. A.¹²^ORCID

Affiliation:

1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041, Russian Federation

2. Far Eastern Federal University, Vladivostok 690950, Russian Federation

3. Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600, Russian Federation

Funder

Grant of the President of the Russian Federation

Russian Foundation for Basic Research (RFBR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4958936

Reference34 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Boron Nitride Nanomesh

3. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Electronic Structure of Epitaxial Single-LayerMoS2

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2. First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te);Crystal Research and Technology;2024-02-26

3. Van der Waals Heteroepitaxial Growth of Layered SnSe$${}_{\mathbf{2}}$$ on Surfaces Si(111) and Bi$${}_{\mathbf{2}}$$Se$${}_{\mathbf{3}}$$(0001);Optoelectronics, Instrumentation and Data Processing;2022-12

4. Epitaxial Growth of Monolayer SnSe₂ Films on Gd-Intercalated Quasi-Free-Standing Monolayer Graphene with Enhanced Interface Adsorption;The Journal of Physical Chemistry C;2022-03-23

5. Electronic structure of SnSe2 films grown by molecular beam epitaxy;Applied Physics Letters;2019-03-04

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