Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure-Reference-Cited by-同舟云学术

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

Published:2015-11-20 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Sediri Haikel,Pierucci Debora,Hajlaoui Mahdi,Henck Hugo,Patriarche Gilles,Dappe Yannick J.,Yuan Sheng,Toury Bérangère,Belkhou Rachid,Silly Mathieu G.,Sirotti Fausto,Boutchich Mohamed,Ouerghi Abdelkarim

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep16465.pdf

Reference55 articles.

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3. Lee, G.-H. et al. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Appl. Phys. Lett. 99, 243114 (2011).

4. Watanabe, K., Taniguchi, T. & Kanda, H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat. Mater. 3, 404–409 (2004).

5. Ju, L. et al. Photoinduced doping in heterostructures of graphene and boron nitride. Nat. Nanotechnol. 9, 348–52 (2014).

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