Acceptor state anchoring in gallium nitride-Reference-Cited by-同舟云学术

Acceptor state anchoring in gallium nitride

Published:2020-03-09 Issue:10 Volume:116 Page:102105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cameron D.¹^ORCID,O'Donnell K. P.¹^ORCID,Edwards P. R.¹^ORCID,Peres M.²^ORCID,Lorenz K.²^ORCID,Kappers M. J.³,Boćkowski M.⁴^ORCID

Affiliation:

1. SUPA, Department of Physics, University of Strathclyde, Glasgow G4 0NG, Scotland, United Kingdom

2. IPFN, INESC-MN Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal

3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, England, United Kingdom

4. Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142168

Reference22 articles.

1. Luminescence properties of defects in GaN

2. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

3. Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

4. Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D0 to 7F1 transition

5. Evidence for Two Mg Related Acceptors in GaN

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