Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates-Reference-Cited by-同舟云学术

Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates

Published:2005-12 Issue:11 Volume:98 Page:113514
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kyono Takashi,Hirayama Hideki,Akita Katsushi,Nakamura Takao,Ishibashi Koji

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2134885

Reference25 articles.

1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

2. Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm

3. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

4. Highly Transparent Structure for Nitride Ultraviolet Light Emitting Diodes

5. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic, mechanical, optical and thermodynamic properties of the quaternary semiconductors Sr3GeMgN4 and Ba3GeMgN4;Materials Science and Engineering: B;2023-04

2. Elastic, electronic, optical and thermodynamic properties of Ba3Ca2Si2N6 semiconductor: First-principles predictions;Physica B: Condensed Matter;2020-07

3. Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization;physica status solidi (a);2019-10-21

4. GaN on sapphire substrates for visible light-emitting diodes;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

5. Structural, elastic and thermodynamic properties of tetragonal and orthorhombic polymorphs of Sr2GeN2: an ab initio investigation;High Pressure Research;2016-04-02