Reduction of real‐space transfer in depletion‐mode dipole heterostructure field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104887
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1. A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
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4. Dipole heterostructure field-effect transistor
5. Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers
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2. Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping;Semiconductors;2014-05
3. Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors;Technical Physics Letters;2012-09
4. Heterojunction band offset engineering;Surface Science Reports;1996
5. Nonlocal and nonlinear transport in semiconductors: Real‐space transfer effects;Journal of Applied Physics;1995-02-15
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