Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers-Reference-Cited by-同舟云学术

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Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers

Published:1987-02 Issue:2 Volume:34 Page:175-180
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Priddy K.L.,Kitchen D.R.,Grzyb J.A.,Litton C.W.,Henderson T.S.,Chin-Kun Peng ,Kopp W.F.,Morkoc H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31974/01486615.pdf?arnumber=1486615

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Boltzmann Transport Equation in Macroscopic and Quantum-Confined Systems;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

2. The switching characteristics of Shottky-barrier diodes under high-level injection with a non-zero field at the depletion layer edge;International Journal of Electronics;1998-05

3. Off-state breakdown in power pHEMTs: the impact of the source;IEEE Transactions on Electron Devices;1998

4. Al-free InP-based high electron mobility transistors: Design, fabrication and performance;Solid-State Electronics;1997-08

5. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07

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