Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance
Author:
Affiliation:
1. IMEC Kapeldreef 75, B-3001 Leuven, Belgium
2. Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven, Belgium
Funder
IMEC's Industrial Affiliation Program on STT-MRAM device
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4940772
Reference18 articles.
1. Overview of emerging nonvolatile memory technologies
2. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
3. Future prospects of MRAM technologies
4. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)
5. Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
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