Hafnium titanate as a high permittivity gate insulator: Electrical and physical characteristics and thermodynamic stability
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2434833
Reference31 articles.
1. Chemical vapor deposition of HfO2 films on Si(100)
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3. Electrical conduction and band offsets in Si/HfxTi1−xO2/metal structures
4. Effects of annealing temperature on the characteristics of HfSixOy/HfO2 high-kgate oxides
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1. Electrical and optical properties of (Ta2O5)1−x–(TiO2)x films, x = 0.035, prepared by sputtering of ceramic and mosaic (Ta, Ti) metal targets;Journal of Applied Physics;2021-07-21
2. Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method;Journal of Materials Science: Materials in Electronics;2018-11-13
3. Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method;Journal of Alloys and Compounds;2016-12
4. Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs;Journal of Electronic Materials;2016-05-19
5. Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates;Materials;2015-12-02
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