Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon-Reference-Cited by-同舟云学术

Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon

Published:2000-05-15 Issue:10 Volume:87 Page:7551-7557
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jeong Ji-Weon,Rosenblum Mark D.,Kalejs Juris P.,Rohatgi Ajeet

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373427

Reference14 articles.

1. Combined impurity gettering and defect passivation in polycrystalline silicon solar cells

2. Gettering and hydrogen passivation of edge‐defined film‐fed grown multicrystalline silicon solar cells by Al diffusion and forming gas anneal

3. Effect of post-PECVD photo-assisted anneal on multicrystalline silicon solar cells

4. Trapping of minority carriers in multicrystalline silicon

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