Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface-Reference-Cited by-同舟云学术

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Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface

Published:2017-12-21 Issue:23 Volume:122 Page:234503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Anders M. A.¹,Lenahan P. M.¹²,Lelis A. J.³

Affiliation:

1. Intercollege Program of Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA

Funder

DOD | U.S. Army

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4996298

Reference98 articles.

1. Spin-Dependent Recombination on Silicon Surface

2. Explanation of the large spin-dependent recombination effect in semiconductors

3. Spin dependent recombination at the silicon/silicon dioxide interface

4. Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes

5. High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra

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1. Quantum systems in silicon carbide for sensing applications;Reports on Progress in Physics;2023-12-20

2. Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era;Journal of Applied Physics;2023-12-08

3. Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO;Journal of Applied Physics;2023-12-08

4. Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO₂/HfO₂ Transistors;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

5. Charge pumping electrically detected magnetic resonance of silicon carbide power transistors;Journal of Applied Physics;2023-08-03

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