Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer-Reference-Cited by-同舟云学术

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Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Published:2021-02-01 Issue:5 Volume:118 Page:053506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Minghui¹^ORCID,Wang Wei¹^ORCID,Chen Genqiang¹,Abbasi Haris Naeem¹,Lin Fang¹,Wen Feng¹,Wang Kaiyue¹,Zhang Jingwen¹^ORCID,Bu Renan¹²,Wang Hongxing¹²^ORCID

Affiliation:

1. Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China

2. Key Lab for Physical Electronics and Devices, Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China

Funder

Nature Science Fund of Shaanxi Province

the National Nature Science Foundation of China

the China Postdoctoral Science Foundation

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0027882

Reference25 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Surface-Conducting Diamond

3. Superconductivity in diamond

4. Efficient and Tunable Photoinduced Honeycomb Lattice in an Atomic Ensemble

5. Hydrogen-terminated diamond surfaces and interfaces

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1. Recent advances in diamond MOSFETs with normally off characteristics;Functional Diamond;2024-05-24

2. Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials;Journal of Applied Physics;2024-03-25

3. Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method;Diamond and Related Materials;2024-03

4. Electrical Characteristics of H-Diamond Transistors With ZrO₂/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation;IEEE Transactions on Electron Devices;2024-03

5. Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3;Crystals;2023-05-08

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