Laser selective area epitaxy of GaAs metal‐semiconductor‐field‐effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105128
Reference17 articles.
1. Planar monolithic integration of a photodiode and a GaAs preamplifier
2. Optoelectronic integrated AlGaAs/GaAsp‐i‐n/field‐effect transistor with an embedded, planarp‐i‐nphotodiode
3. Molecular beam epitaxial writing of patterned GaAs epilayer structures
4. New laterally selective growth technique by metalorganic chemical vapor deposition
5. Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High speed metal‐semiconductor‐metal photodetector manufactured on GaAs by low‐temperature photoassisted metalorganic chemical vapor deposition;Applied Physics Letters;1995-06-26
2. Photoassisted Selective Area Growth of III–V Compounds;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995
3. Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition;Applied Physics Letters;1994-05-02
4. Lateral band‐gap control of InGaAsP multiple quantum wells by laser‐assisted metalorganic molecular beam epitaxy for a multiwavelength laser array;Applied Physics Letters;1994-02-21
5. Selective growth of III-V semiconductor compounds by laser-assisted epitaxy;Semiconductor Science and Technology;1993-06-02
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