Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications-Reference-Cited by-同舟云学术

Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications

Published:2019-07 Issue:7 Volume:9 Page:075119
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chen Ying-Chen¹^ORCID,Huang Hui-Chun²,Lin Chih-Yang²,Hu Szu-Tung³,Lin Chao-Cheng⁴,Lee Jack C.¹

Affiliation:

1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

2. Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan

3. Material Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, USA

4. Taiwan Semiconductor Research Institute, TSRI, Hsinchu, Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5097233

Reference21 articles.

1. Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

2. Nanoionics-based resistive switching memories

3. P. Cappelletti, IEEE International Electron Devices Meeting (IEDM) 10.1, 2015.

4. Metal–Oxide RRAM

5. A. Kawahara, R. Azuma, Y. Ikeda, K. Kawai, Y. Katoh, K. Tanabe, T. Nakamura, Y. Sumimoto, N. Hayakawa, K. Tsuji, S. Yoneda, T. Takagi, T. Mikawa, and K. Aono, ISSCC Dig. Tech. Papers, 2012, 432–433.

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