Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric-Reference-Cited by-同舟云学术

Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric

Published:2013-04-29 Issue:17 Volume:102 Page:173501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kozen Alexander C.,Schroeder Marshall A.,Osborn Kevin D.,Lobb C. J.,Rubloff Gary W.

Funder

Army Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4801979

Reference21 articles.

1. Decoherence in Josephson Qubits from Dielectric Loss

2. Molecular Layer Deposition of Alucone Polymer Films Using Trimethylaluminum and Ethylene Glycol

3. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

4. Evaluating Al2O3 gas diffusion barriers grown directly on Ca films using atomic layer deposition techniques

5. Multilayer Al2O3/TiO2 Atomic Layer Deposition coatings for the corrosion protection of stainless steel

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