Mapping of GaAs wafers by quantitative infrared microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338074
Reference9 articles.
1. Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAs
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3. Experimental requirements for quantitative mapping of midgap flaw concentration in semi‐insulating GaAs wafers by measurement of near‐infrared transmittance
4. Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi‐insulating GaAs
5. Distributions of residual stress, dislocations, and EL2 in Czochralski‐grown semi‐insulating GaAs
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