Extended x‐ray absorption fine structure investigation on buried InAsP/InP interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111906
Reference19 articles.
1. Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy
2. Growth and analysis of quantum well structures
3. Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy
4. Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures
5. Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE
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