Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2041823
Reference9 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
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3. SiC substrate defects and III-N heteroepitaxy
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5. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
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