Influence of dielectric deposition parameters on the In0.2Ga0.8As/GaAs quantum well intermixing by impurity-free vacancy disordering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1486027
Reference19 articles.
1. Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding
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4. Introduction To The Issue On Interdiffused Quantum-well Materials And Devices
5. Semiconductor lasers using diffused quantum-well structures
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1. Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells;Materials;2023-09-04
2. Magnetic properties and the interfacial Dzyaloshinskii-Moriya interaction in exchange biased Pt/Co/NixOy films;Applied Surface Science;2021-03
3. IFVD-based large intermixing selectivity window process for high power laser diodes;Semiconductor Lasers and Laser Dynamics VIII;2018-05-09
4. Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers;Semiconductor Science and Technology;2018-01-05
5. Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film;ACTA PHOTONICA SINICA;2018
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