Calculations of the electronic structure of strained InAs quantum dots in InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1486021
Reference17 articles.
1. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
2. Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy
3. Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
4. Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
5. Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
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