Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1426258
Reference5 articles.
1. Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy
2. Time-domain dielectric constant measurement of thin film in GHz–THz frequency range near the Brewster angle
3. Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz
4. Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy
5. Microwave Conductivity of Silicon and Germanium
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