Carbon concentration dependence of charged point‐defect density in semi‐insulating GaAs as observed by nuclear magnetic resonance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103674
Reference8 articles.
1. Identification of a trigonal cation antisite defect in gallium arsenide
2. Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers
3. Identification of AsGaantisite defects in liquid encapsulated Czochralski GaAs
4. Charged point defects in GaAs crystals evaluated by nuclear‐magnetic‐resonance spin echo
5. Nuclear-magnetic-resonance detection of charge defects in gallium arsenide
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1. Enhanced NMR with Optical Pumping Yields 75As Signals Selectively from a Buried GaAs Interface;Journal of the American Chemical Society;2017-03-10
2. Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation;Japanese Journal of Applied Physics;1993-05-15
3. Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing;Japanese Journal of Applied Physics;1992-12-01
4. Mechanism for homogenizing electrical properties of semi‐insulating GaAs during ingot annealing;Journal of Applied Physics;1991-09
5. Compensation mechanism in undoped, semi‐insulating GaAs;Journal of Applied Physics;1991-05-15
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