Identification of a trigonal cation antisite defect in gallium arsenide
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.1973/fulltext
Reference18 articles.
1. Identification of a defect in a semiconductor:EL2 in GaAs
2. Arsenic antisite defectAsGaandEL2 in GaAs
3. The Arsenic Antisite Defect in GaAs and Its Relation to EL2
4. Energy levels and photo-quenching properties of the arsenic anti-site in GaAs
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1. Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states;Physical Review B;2003-11-14
2. Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy;PHYS STATUS SOLIDI B;1999
3. Charge transfer between EL2 and a trigonal Ga antisite-related acceptor in semi-insulating GaAs studied by optically detected magnetic resonance;Semiconductor Science and Technology;1998-10-01
4. ODMR Investigation of Proton Irradiated GaAs;Materials Science Forum;1997-12
5. Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance;Materials Science Forum;1997-12
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