Arsenic antisite defectAsGaandEL2 in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.1332/fulltext
Reference16 articles.
1. Photocapacitance quenching effect for “oxygen” in GaAs
2. Photo-Electron Paramagnetic Resonance Study of AsGaAntisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
3. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
4. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
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