Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3522651
Reference18 articles.
1. Scattering mechanism in modulation-doped shallow two-dimensional electron gases
2. Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers
3. Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers
4. Fabrication and characterization of an induced GaAs single hole transistor
5. AlGaAs/GaAs single electron transistor fabricated without modulation doping
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3. Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs;Physical Review B;2022-02-07
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