Author:
Laroche D.,Das Sarma S.,Gervais G.,Lilly M. P.,Reno J. L.
Subject
Physics and Astronomy (miscellaneous)
Reference19 articles.
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4. Variable density high mobility two‐dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure
5. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
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