Comprehensive Rutherford backscattering and channeling study of ion‐beam‐synthesized ErSi1.7 layers-Reference-Cited by-同舟云学术

Comprehensive Rutherford backscattering and channeling study of ion‐beam‐synthesized ErSi1.7 layers

Published:1996-05-01 Issue:9 Volume:79 Page:6920-6925
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Wu M. F.¹,Vantomme A.²,De Wachter J.²,Degroote S.²,Pattyn H.²,Langouche G.²,Bender H.³

Affiliation:

1. Department of Technical Physics, Peking University, Beijing, People's Republic of China Instituut voor Kern‐ en Stralingsfysika, University of Leuven, B‐3001 Leuven, Belgium

2. Instituut voor Kern‐ en Stralingsfysika, University of Leuven, B‐3001 Leuven, Belgium

3. IMEC, Kapeldreef 75, B‐3001 Leuven, Belgium

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

1. S. P. Muraka, Silicides for VLSI Applications (Academic, New York, 1983).

2. R. T. Tung, J. M. Poate, J. C. Bean, J. M. Gibson, and D. C. Jacobson, Thin Solid Films 93, 77 (1982).THSFAP0040-6090

3. J. Derrien and F. Arnaud d’Avitaya, J. Vac. Sci. Technol. A 5, 2111 (1987).JVTAD60734-2101

4. R. T. Tung and F. Schrey, Mater. Res. Soc. Symp. Proc. 122, 559 (1988).MRSPDH0272-9172

5. J. A. Knapp and S. T. Picraux, Appl. Phys. Lett. 48, 466 (1986).APPLAB0003-6951

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