Growth of InP and InGaAsP (Eg≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93208
Reference13 articles.
1. The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions
2. The effect of temperature on the surface structure and stoichiometry of (100) InP surfaces
3. Implantation and PH 3 Ambient Annealing of InP
4. Control of substrate degradation IN InP LPE growth with PH3 partial pressure
5. Thermal degradation of InP and its control in LPE growth
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Novel surface preservation technique for large area growth of (100) InP substrate by LPE;Journal of Crystal Growth;1991-08
2. An investigation of the growth of In0·53Ga0·47As layers on InP by liquid phase epitaxy;Bulletin of Materials Science;1990-03
3. Liquid‐phase‐epitaxial regrowth in the GaInAsP system;Journal of Applied Physics;1987-09
4. Liquid phase epitaxial growth of InP using In1−xSnx melts;Journal of Crystal Growth;1986-07
5. Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP;Semiconductors and Semimetals;1985
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