An investigation of the growth of In0·53Ga0·47As layers on InP by liquid phase epitaxy-Reference-Cited by-同舟云学术

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An investigation of the growth of In0·53Ga0·47As layers on InP by liquid phase epitaxy

Published:1990-03 Issue:1-2 Volume:13 Page:33-36
ISSN:0250-4707
Container-title:Bulletin of Materials Science
language:en
Short-container-title:Bull. Mater. Sci.

Author:

Dhar S,Mitra Mala,Roy J B,Nag B R

Publisher

Springer Science and Business Media LLC

Subject

Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF02744854.pdf

Reference14 articles.

1. Beneking H, Grote N and Selders J 1982J. Cryst. Growth 54 59

2. Bhattacharya P K, Rao M V and Tsai M J 1981J. Appl. Phys. 20 2105

3. Cook L W, Tashima M M, Tabatabaie N, Lows T S and Stillman G E 1982J. Cryst. Growth 56 475

4. Keramidas V G, Mahajan S, Temkin H and Bonner W A 1980Inst. Phys. Conf. Ser. 56 95

5. Keramidas V G, Temkin H and Bonner W A 1982Appl. Phys. Lett. 40 731

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