Measurement of modulation saturation intensity in strain‐balanced, undefected InGaAs/GaAsP modulators operating at 1.064 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109990
Reference10 articles.
1. Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure
2. GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device
3. GaInAs/GaAs multiple quantum well reflection modulators
4. InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
5. Electroabsorptive modulators in InGaAs/AlGaAs
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1. In[sub 0.18]Ga[sub 0.82]As/GaAs[sub 1−y]P[sub y] quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Digital free-space optical interconnections: a comparison of transmitter technologies;Applied Optics;1995-06-10
3. Saturation intensity and time response of InGaAs-InGaP MQW optical modulators;IEEE Journal of Quantum Electronics;1995
4. Picosecond carrier escape by resonant tunneling in pseudomorphic InGaAs/GaAsP quantum well modulators;Applied Physics Letters;1994-03-28
5. Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm;IEEE Photonics Technology Letters;1993-12
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