Picosecond carrier escape by resonant tunneling in pseudomorphic InGaAs/GaAsP quantum well modulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111840
Reference12 articles.
1. Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs
2. Measurement of modulation saturation intensity in strain‐balanced, undefected InGaAs/GaAsP modulators operating at 1.064 μm
3. Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics
4. Electric-field-dependent photoresponse of multiple quantum well modulator
5. Electric-field-dependent photoresponse of multiple quantum well modulator
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In[sub 0.18]Ga[sub 0.82]As/GaAs[sub 1−y]P[sub y] quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Recent developments and applications in electroabsorption semiconductor modulators;Materials Science and Engineering: R: Reports;1999-08
3. RECENT DEVELOPMENTS AND APPLICATIONS IN ELECTROABSORPTION SEMICONDUCTOR MODULATORS;Journal of Nonlinear Optical Physics & Materials;1995-04
4. Electric‐field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator;Journal of Applied Physics;1995-01
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