Bandstructure effects in ultra-thin-body double-gate field effect transistor: A fullband analysis
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2937186
Reference21 articles.
1. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
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5. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
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