Quantitative identification of significant k-points enabling accurate & computationally efficient UTB MOS device simulation
Author:
Affiliation:
1. Indian Institute of Science Education and Research Bhopal,Department of Electrical Engineering and Computer Science,Bhopal,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9933917/9933992/09934279.pdf?arnumber=9934279
Reference10 articles.
1. A fast $\vec{k}\cdot\vec{p}$ solver for hole inversion layers with an efficient 2D $\vec{k}$ -space discretization
2. nanoHUB.org: Advancing Education and Research in Nanotechnology
3. Empiricalspds*tight-binding calculation for cubic semiconductors: General method and material parameters
4. Synopsys;guide;San Jose CA 2008,0
5. Significant k-point selection scheme for computationally efficient band structure based utb device simulations;solanki;Semiconductor Science and Technology 2021,0
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