A closed‐form inversion‐type polysilicon thin‐film transistor dc/ac model considering the kink effect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358874
Reference10 articles.
1. Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
2. Avalanche-induced effects in polysilicon thin-film transistors
3. New analytical polycrystalline-silicon thin-film transistor model for computer aided design and parameter extraction
4. An improved analytical short-channel MOSFET model valid in all regions of operating for analog/digital circuit simulation
5. Subthreshold model of a polycrystalline silicon thin‐film field‐effect transistor
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3. Theoretical determination of the impact of channel morphology and quantum size effects on the surface potential of nanocrystalline silicon thin film transistors;Materials Science in Semiconductor Processing;2014-08
4. QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL;International Journal of Modern Physics B;2012-04-20
5. A physical surface-potential-based drain current model for polysilicon thin-film transistors;Journal of Semiconductors;2012-03
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