Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368881
Reference50 articles.
1. Revised model of thermally stimulated current in MOS capacitors
2. Critical Evaluation of the Midgap-Voltage-Shift Method for Determining Oxide Trapped Charge in Irradiated Mos Devices
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4. The nature of the trapped hole annealing process
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