Evidence for the AlZn-Oi defect-complex model for magnetron-sputtered aluminum-doped zinc oxide: A combined X-ray absorption near edge spectroscopy, X-ray diffraction and electronic transport study-Reference-Cited by-同舟云学术

Evidence for the AlZn-Oi defect-complex model for magnetron-sputtered aluminum-doped zinc oxide: A combined X-ray absorption near edge spectroscopy, X-ray diffraction and electronic transport study

Published:2019-07-28 Issue:4 Volume:126 Page:045106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bikowski Andre¹,Zajac Dariusz A.¹,Vinnichenko Mykola²,Ellmer Klaus¹^ORCID

Affiliation:

1. Helmholtz-Zentrum Berlin für Materialien und Energie, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

2. Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, Winterbergstraße 28, 01277 Dresden, Germany

Funder

German Ministry for Economics

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5089555

Reference67 articles.

1. Über die elektrische Leitfähigkeit von Zinkoxyd

2. Hall Effect Studies of Doped Zinc Oxide Single Crystals

3. D. S. Ginley, H. Hosono, and D. C. Paine, Handbook of Transparent Conductors (Springer, New York, 2010), p. 534.

4. Transparent conducting oxide semiconductors for transparent electrodes

5. Resistivity of polycrystalline zinc oxide films: current status and physical limit

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